As CMOS technology scales into the deep nanometer regime, digital circuit reliability is increasingly threatened by the combined stochastic effects of Bias Temperature Instability (BTI) and Process Variation (PV). Traditional reliability analysis methods, which rely on computationally intensive simulations or extensive lookup tables, fail to scale efficiently for large designs, creating a critical bottleneck in design space exploration.
arXiv:2607. 05187v1 Announce Type: new Abstract: As CMOS technology scales into the deep nanometer regime, digital circuit reliability is increasingly threatened by the combined stochastic effects of Bias Temperature Instability (BTI) and Process Variation (PV).
arXiv:2308. 07867v4 Announce Type: replace-cross Abstract: The absence of formal performance guarantees in machine learning (ML) has limited its adoption for safety-critical power system applications, where confidence and interpretability are as vital as accuracy.
arXiv:2606. 04266v1 Announce Type: cross Abstract: Deep neural networks (DNNs) are used in a variety of real-world applications including, for example, image classification and speech recognition.
arXiv:2504. 03711v2 Announce Type: replace-cross Abstract: Artificial intelligence (AI)-driven electronic design automation (EDA) techniques have been extensively explored for VLSI circuit design applications.
arXiv:2608. 09622v1 Announce Type: new Abstract: Reliability qualification of advanced semiconductor devices requires sequential stress decisions that balance characterization objectives against multiple competing failure mechanisms.
arXiv:2608. 08363v1 Announce Type: cross Abstract: Silicon carbide (SiC) power modules are increasingly deployed in automotive traction inverters, where condition monitoring is essential to prevent in-service failures.
arXiv:2607. 16183v1 Announce Type: new Abstract: To address the escalating energy and latency demands of machine-learning workloads, we introduce a blueprint for an energy-efficient and fast thermodynamic computing stack that leverages stochastic analog processes in physical hardware.
arXiv:2606. 24046v1 Announce Type: cross Abstract: This work presents a machine learning framework that leverages an autoencoder (AE) for the efficient modeling of FinFET.
arXiv:2606. 01265v1 Announce Type: cross Abstract: This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems.
arXiv:2608. 08048v1 Announce Type: cross Abstract: This paper presents, for the first time in power systems literature to our knowledge, analytical tools to explain the training performance of machine learning surrogate models for power system dynamics.
arXiv:2605. 00868v3 Announce Type: replace-cross Abstract: Ultra-wide bandgap (UWBG) Ga$_2$O$_3$ is a promising semiconductor for high-power and high-temperature electronics.
arXiv:2603. 13092v2 Announce Type: replace Abstract: Yield Multi-Corner Analysis validates circuits across 25+ Process-Voltage-Temperature corners, resulting in a combinatorial simulation cost of $O(K \times N)$ where $K$ denotes corners and $N$ exceeds $10^4$ samples per corner.