arXiv Machine Learning
AI and TCAD for Inverse Design and Defect Discovery: From Simple Machine Learning to LLM
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arXiv Machine Learning
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Deep Learning to Automate Parameter Extraction and Model Fitting of Two-Dimensional Transistors
arXiv:2507.05134v2 Announce Type: replace Abstract: We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimens...
arXiv Machine Learning
Jul 3
A Survey of Circuit Foundation Model: Foundation AI Models for VLSI Circuit Design and EDA
arXiv:2504. 03711v2 Announce Type: replace-cross Abstract: Artificial intelligence (AI)-driven electronic design automation (EDA) techniques have been extensively explored for VLSI circuit design applications.
arXiv AI
Jun 24
Rapid FinFET Modelling Using an Autoencoder
arXiv:2606. 24046v1 Announce Type: cross Abstract: This work presents a machine learning framework that leverages an autoencoder (AE) for the efficient modeling of FinFET.
arXiv AI
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PALTO: Physics-Informed Active Learning for Tri-Gate FinFET Design Optimization for Vertical Power Delivery
arXiv:2606. 01265v1 Announce Type: cross Abstract: This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems.
arXiv Machine Learning
Sep 15
Prescreening Point Defects in Semiconductors With Machine Learning
The paper presents physics‑guided machine‑learning models that predict defect formation energies and zero‑phonon lines (ZPLs) for point defects in semiconductors, aiming to replace costly density‑functional theory (DFT) calculations in the prescreening stage of high‑throughput workflows. Using ridge, kernel ridge, and multilayer perceptron models with three descriptors, the authors achieve mean absolute errors of 0.437 eV for formation energies and 0.202 eV for ZPLs on vacancies and substitutions in 4H‑SiC, while interstitials show larger errors (1.101 eV and 0.230 eV). These results demonstrate that the models can effectively accelerate defect screening, potentially obviating the need for expensive DFT relaxations in many cases.
arXiv AI
Jun 11
Physics-informed generative AI for semiconductor manufacturing: Enforcing hard physical constraints in generative models by construction
arXiv:2606. 11247v1 Announce Type: cross Abstract: Generative models are increasingly used to propose designs, data, and control actions for physical systems, yet many such systems are governed by hard physical constraints rather than by perceptual plausibility.