arXiv:2606. 24046v1 Announce Type: cross Abstract: This work presents a machine learning framework that leverages an autoencoder (AE) for the efficient modeling of FinFET.
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arXiv:2507.05134v2 Announce Type: replace Abstract: We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimens...
arXiv:2609.13200v1 Announce Type: cross Abstract: Compact transistor models are the mathematical backbone of circuit simulation. However, at advanced nodes such as 3nm, transport physics becomes too...
arXiv:2609.07046v1 Announce Type: new Abstract: AI has revolutionized various engineering domains, but its impact on semiconductor device design and defect discovery is still limited, due to limited...
arXiv:2504. 03711v2 Announce Type: replace-cross Abstract: Artificial intelligence (AI)-driven electronic design automation (EDA) techniques have been extensively explored for VLSI circuit design applications.
arXiv:2606. 01265v1 Announce Type: cross Abstract: This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems.
arXiv:2603. 09161v2 Announce Type: replace-cross Abstract: Learning effective netlist representations is fundamentally constrained by the scarcity of labeled datasets, as real designs are protected by Intellectual Property (IP) and costly to annotate.