arXiv AI By Ayoub Sadeghi, Leonid Popryho, Inna Partin-Vaisband

PALTO: Physics-Informed Active Learning for Tri-Gate FinFET Design Optimization for Vertical Power Delivery

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arXiv:2606. 01265v1 Announce Type: cross Abstract: This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems.

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arXiv AI
Sep 7

A Unified Physics-Aware Quantum Machine Learning Framework across Power GaN HEMTs and Logic Nanowire FETs: Predicting Unseen Process Splits and Held-Out Geometry Combinations with Lower Error and Tighter Split-to-Split Variability

The paper introduces a reinforcement‑learning framework that automatically discovers compact parametrized quantum circuits for modeling power GaN HEMTs and logic nanowire FETs. Using a graph neural network policy trained with proximal policy optimization, the method optimizes circuit architectures based on leave‑one‑group‑out cross‑validation error, achieving the lowest mean absolute error across 11 targets compared to six classical baselines. The results show significant reductions in error and variability for key device metrics (Ioff, VTH, SS) on both HEMT and NWFET datasets, demonstrating the viability of RL‑selected quantum circuits as compact, physically consistent surrogates without explicit physical constraints.

By Rushat Rai, Yun-Yuan Wang, Autsada Kakaen, Pei-Jie Chang, Doan Viet Nguyen, Yuan-Chieh Chiu, Doldet Tantraviwat, Niall Tumilty, Simon See, Wen-Jay Lee, Tai-Yue Li, Nan-Yow Chen, Tian-Li Wu
arXiv Machine Learning
Sep 10

Deep Learning to Automate Parameter Extraction and Model Fitting of Two-Dimensional Transistors

arXiv:2507.05134v2 Announce Type: replace Abstract: We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimens...

By Robert K. A. Bennett, Jan-Lucas Uslu, Harmon F. Gault, Asir Intisar Khan, Lauren Hoang, Tara Pe\~na, Kathryn Neilson, Young Suh Song, Zhepeng Zhang, Andrew J. Mannix, Eric Pop
arXiv Machine Learning
Sep 4

Mesh-Native Physics-Informed Graph Surrogates for TCAD-in-the-Loop Design Space Exploration

The paper introduces a physics‑informed graph attention network that directly operates on the tetrahedral mesh used in TCAD simulations of FinFET devices. By predicting electrostatic potential and quasi‑Fermi levels at every mesh node and training with both data loss and finite‑volume current‑continuity residuals, the surrogate retains the underlying carrier‑transport physics while achieving size generalization. Benchmarks against Sentaurus Device show sub‑volt RMSE for the drift‑diffusion fields and a per‑design throughput that is orders of magnitude faster, enabling rapid Pareto‑front exploration of large multi‑fin arrays that would otherwise be prohibitively slow to simulate.

By Leonid Popryho, Ayoub Sadeghi, Inna Partin-Vaisband
arXiv Machine Learning
Jul 7

SMART: A Machine Learning and Monte Carlo Framework for Rapid Analysis of Stochastic Transistor Aging and Process Variation in Digital Circuits

arXiv:2607. 05187v1 Announce Type: new Abstract: As CMOS technology scales into the deep nanometer regime, digital circuit reliability is increasingly threatened by the combined stochastic effects of Bias Temperature Instability (BTI) and Process Variation (PV).

By Arash Esshaghi, Siavash Es'haghi, Gholamreza Shahabadi, Alireza Moradi