arXiv:2606. 24046v1 Announce Type: cross Abstract: This work presents a machine learning framework that leverages an autoencoder (AE) for the efficient modeling of FinFET.
arXiv:2507.05134v2 Announce Type: replace Abstract: We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimens...
arXiv:2609.13200v1 Announce Type: cross Abstract: Compact transistor models are the mathematical backbone of circuit simulation. However, at advanced nodes such as 3nm, transport physics becomes too...
arXiv:2609.07046v1 Announce Type: new Abstract: AI has revolutionized various engineering domains, but its impact on semiconductor device design and defect discovery is still limited, due to limited...
arXiv:2504. 03711v2 Announce Type: replace-cross Abstract: Artificial intelligence (AI)-driven electronic design automation (EDA) techniques have been extensively explored for VLSI circuit design applications.
arXiv:2606. 01265v1 Announce Type: cross Abstract: This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems.
arXiv:2603. 09161v2 Announce Type: replace-cross Abstract: Learning effective netlist representations is fundamentally constrained by the scarcity of labeled datasets, as real designs are protected by Intellectual Property (IP) and costly to annotate.
The paper introduces a physics‑informed graph attention network that directly operates on the tetrahedral mesh used in TCAD simulations of FinFET devices. By predicting electrostatic potential and quasi‑Fermi levels at every mesh node and training with both data loss and finite‑volume current‑continuity residuals, the surrogate retains the underlying carrier‑transport physics while achieving size generalization. Benchmarks against Sentaurus Device show sub‑volt RMSE for the drift‑diffusion fields and a per‑design throughput that is orders of magnitude faster, enabling rapid Pareto‑front exploration of large multi‑fin arrays that would otherwise be prohibitively slow to simulate.
arXiv:2609.36752v1 Announce Type: new Abstract: Circuit design is a complex and iterative process that requires expertise in electronic engineering. It involves selecting components while meeting per...
arXiv:2603. 13092v2 Announce Type: replace Abstract: Yield Multi-Corner Analysis validates circuits across 25+ Process-Voltage-Temperature corners, resulting in a combinatorial simulation cost of $O(K \times N)$ where $K$ denotes corners and $N$ exceeds $10^4$ samples per corner.
arXiv:2606. 16939v1 Announce Type: cross Abstract: A prominent research direction in mechanistic interpretability is learning sparse circuits over LLM components to reveal how they jointly produce model behavior.
arXiv:2608. 03913v1 Announce Type: new Abstract: Dense pretrained transformers do not naturally expose interpretable units for circuit extraction.
arXiv:2607. 23225v1 Announce Type: new Abstract: As chip manufacturing processes advance to deep submicron nodes, parasitic interconnect effects increasingly dominate the performance of analog and mixed-signal (AMS) circuits and often lead to costly layout iterations.