The paper introduces ADAPT, a lightweight machine‑learning force field that replaces graph neural networks with a direct coordinates‑in‑space Transformer encoder to model all pairwise atomic interactions. Applied to silicon point defects, ADAPT reduces force prediction error by about 22% and energy prediction error by roughly 40% compared to a state‑of‑the‑art GNN model, while also cutting computational cost. This approach addresses common GNN issues such as oversmoothing, oversquashing, and poor long‑range interaction representation, which are especially problematic for point defect modeling.
By Evan Dramko, Yihuang Xiong, Yizhi Zhu, Geoffroy Hautier, Thomas Reps, Christopher Jermaine, Anastasios Kyrillidis
arXiv:2609.07046v1 Announce Type: new
Abstract: AI has revolutionized various engineering domains, but its impact on semiconductor device design and defect discovery is still limited, due to limited...
By Hiu Yung Wong
arXiv:2602. 04861v2 Announce Type: replace-cross Abstract: Machine Learning Interatomic Potentials (MLIPs) sometimes fail to reproduce the physical smoothness of the quantum potential energy surface (PES), leading to erroneous behavior in downstream simulations that standard energy and force regression evaluations can miss.
By Ryan Liu, Eric Qu, Tobias Kreiman, Samuel M. Blau, Aditi S. Krishnapriyan
The paper introduces a reinforcement‑learning framework that automatically discovers compact parametrized quantum circuits for modeling power GaN HEMTs and logic nanowire FETs. Using a graph neural network policy trained with proximal policy optimization, the method optimizes circuit architectures based on leave‑one‑group‑out cross‑validation error, achieving the lowest mean absolute error across 11 targets compared to six classical baselines. The results show significant reductions in error and variability for key device metrics (Ioff, VTH, SS) on both HEMT and NWFET datasets, demonstrating the viability of RL‑selected quantum circuits as compact, physically consistent surrogates without explicit physical constraints.
By Rushat Rai, Yun-Yuan Wang, Autsada Kakaen, Pei-Jie Chang, Doan Viet Nguyen, Yuan-Chieh Chiu, Doldet Tantraviwat, Niall Tumilty, Simon See, Wen-Jay Lee, Tai-Yue Li, Nan-Yow Chen, Tian-Li Wu
arXiv:2507.05134v2 Announce Type: replace
Abstract: We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimens...
By Robert K. A. Bennett, Jan-Lucas Uslu, Harmon F. Gault, Asir Intisar Khan, Lauren Hoang, Tara Pe\~na, Kathryn Neilson, Young Suh Song, Zhepeng Zhang, Andrew J. Mannix, Eric Pop
arXiv:2607. 00961v1 Announce Type: cross Abstract: Realizing quantum neural networks (QNNs) in industry requires knowing which quantum computing paradigm suits which task.
By Yeonhong Kim, Jonghyeok Im, Monu Nath Baitha, Kyoungsik Kim
arXiv:2601. 07742v4 Announce Type: replace-cross Abstract: Many materials properties depend on higher-order derivatives of the potential energy surface, yet machine learned interatomic potentials (MLIPs) trained with a standard loss on energy, force, and stress errors can exhibit error in curvature, degrading the prediction of vibrational properties.
By Teddy Koker, Abhijeet Gangan, Mit Kotak, Jaime Marian, Tess Smidt
arXiv:2607. 20871v1 Announce Type: cross Abstract: Scaling semiconductor quantum dot arrays toward fault-tolerant quantum computing requires efficient tuneup of spin qubits, a process that depends on the analysis of charge stability maps (CSMs) and remains largely manual.
By Hyma Vallabhapurapu, Marco Candido, Krishna Choudhary, Paul Steinacker, Ensar Vahapoglu, Chris Escott, Wee Han Lim, Andre Saraiva, Nard Dumoulin Stuyck, MengKe Feng
arXiv:2606. 00794v1 Announce Type: cross Abstract: Merging first-principles calculations with machine learning (ML), we aim to accelerate the exploration of catalytic behaviour in novel materials.
By Pavlo Melnyk, Anmar Karmush, M{\aa}rten Wadenb\"ack, Ania Beatriz Rodr\'iguez-Barrera, Johanna Rosen, Michael Felsberg, Jonas Bj\"ork
arXiv:2608.27533v1 Announce Type: cross
Abstract: We introduce a new ab initio approach to simulate semiconductor devices that integrates scalable machine-learned (ML) electronic structure models wit...
By Manasa Kaniselvan, Mauro Dossena, Denghui Lu, Alexander Maeder, Nicolas Vetsch, Alexandros Nikolaos Ziogas, Mathieu Luisier
arXiv:2607. 05187v1 Announce Type: new Abstract: As CMOS technology scales into the deep nanometer regime, digital circuit reliability is increasingly threatened by the combined stochastic effects of Bias Temperature Instability (BTI) and Process Variation (PV).
By Arash Esshaghi, Siavash Es'haghi, Gholamreza Shahabadi, Alireza Moradi
arXiv:2609.37211v1 Announce Type: new
Abstract: Rapid and accurate self-inductance estimation for multilayer rectangle-shaped planar windings is essential for modern high-frequency power converters,...
By Spyros Rigas, Theofilos Papadopoulos, Georgios Alexandridis, Antonios Antonopoulos