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arXiv Machine Learning By Paul Karlsson, Joel Davidsson, Rickard Armiento

Prescreening Point Defects in Semiconductors With Machine Learning

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The paper presents physics‑guided machine‑learning models that predict defect formation energies and zero‑phonon lines (ZPLs) for point defects in semiconductors, aiming to replace costly density‑functional theory (DFT) calculations in the prescreening stage of high‑throughput workflows. Using ridge, kernel ridge, and multilayer perceptron models with three descriptors, the authors achieve mean absolute errors of 0.437 eV for formation energies and 0.202 eV for ZPLs on vacancies and substitutions in 4H‑SiC, while interstitials show larger errors (1.101 eV and 0.230 eV). These results demonstrate that the models can effectively accelerate defect screening, potentially obviating the need for expensive DFT relaxations in many cases.

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