The article presents the first demonstration of an agentic TCAD calibration workflow for a fabricated bottom‑gate In–W–O transistor. Starting from measured transfer curves, the workflow uses measurement–TCAD residuals and local sensitivity tests to guide parameter corrections or additional physical models, accepting only updates that improve device metrics. For a 2%‑W reference device, five agent‑suggested updates reduced the multi‑metric device objective by 14.3× and achieved low errors in threshold voltage and on‑current across varying bias and geometry, showing model transferability and process sensitivity.
arXiv:2609.07046v1 Announce Type: new Abstract: AI has revolutionized various engineering domains, but its impact on semiconductor device design and defect discovery is still limited, due to limited...
arXiv:2607. 03193v1 Announce Type: cross Abstract: Calibrating a superconducting transmon chip is a sequential decision problem under noise, drift, and a finite budget: an expert must choose experiments, read ambiguous plots, judge fit quality, and revise stale beliefs as the chip drifts.
arXiv:2507.05134v2 Announce Type: replace Abstract: We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimens...
arXiv:2606. 29272v1 Announce Type: new Abstract: Technology computer-aided design (TCAD) semiconductor device simulation is fundamentally constrained by the high computational cost of iteratively solving coupled drift-diffusion equations.
arXiv:2608.27533v1 Announce Type: cross Abstract: We introduce a new ab initio approach to simulate semiconductor devices that integrates scalable machine-learned (ML) electronic structure models wit...
arXiv:2606. 24046v1 Announce Type: cross Abstract: This work presents a machine learning framework that leverages an autoencoder (AE) for the efficient modeling of FinFET.
arXiv:2608. 26418v1 Announce Type: cross Abstract: Modern AI workloads and the hardware that runs them evolve on different timescales: architectural definition precedes volume silicon by years, while target workloads shift in months.
arXiv:2606. 11620v1 Announce Type: cross Abstract: Approximate tensor-network simulators enable classical simulation of quantum circuits beyond the reach of exact methods, but selecting optimal approximation parameters -- such as bond dimension thresholds -- remains a costly trial-and-error process.
The paper introduces a physics‑informed graph attention network that directly operates on the tetrahedral mesh used in TCAD simulations of FinFET devices. By predicting electrostatic potential and quasi‑Fermi levels at every mesh node and training with both data loss and finite‑volume current‑continuity residuals, the surrogate retains the underlying carrier‑transport physics while achieving size generalization. Benchmarks against Sentaurus Device show sub‑volt RMSE for the drift‑diffusion fields and a per‑design throughput that is orders of magnitude faster, enabling rapid Pareto‑front exploration of large multi‑fin arrays that would otherwise be prohibitively slow to simulate.
arXiv:2609.13200v1 Announce Type: cross Abstract: Compact transistor models are the mathematical backbone of circuit simulation. However, at advanced nodes such as 3nm, transport physics becomes too...
arXiv:2606. 23001v1 Announce Type: cross Abstract: On-device LLM inference is increasingly attractive for privacy-preserving, reliable, and cost-effective deployment, yet its energy and thermal costs remain a critical bottleneck.
Analog-DB is an open‑source, versioned database that stores analog integrated circuit designs in a process‑neutral topology, reusable testbenches, and machine‑readable datasheets using a domain‑specific language. The database’s parameterization scheme and schema‑governed contracts enable AI design agents to discover, compose, and retarget circuits across multiple process kits. In a case study, a coding agent used the released artifacts to size op‑amp cores for a chopper instrumentation amplifier, uncovering defects that a sizing‑only baseline missed.