arXiv:2608. 09622v1 Announce Type: new Abstract: Reliability qualification of advanced semiconductor devices requires sequential stress decisions that balance characterization objectives against multiple competing failure mechanisms.
By Youssef A. Elhagrasy, Ian Hill, Andr\'e Ivanov
arXiv:2608. 08363v1 Announce Type: cross Abstract: Silicon carbide (SiC) power modules are increasingly deployed in automotive traction inverters, where condition monitoring is essential to prevent in-service failures.
By Mattia Scarpa, Evgeny Kusmenko, Francesco Toso, Mattia Bruschetta, Ruggero Carli, Simon Achatz
arXiv:2607. 05187v1 Announce Type: new Abstract: As CMOS technology scales into the deep nanometer regime, digital circuit reliability is increasingly threatened by the combined stochastic effects of Bias Temperature Instability (BTI) and Process Variation (PV).
By Arash Esshaghi, Siavash Es'haghi, Gholamreza Shahabadi, Alireza Moradi
As CMOS technology scales into the deep nanometer regime, digital circuit reliability is increasingly threatened by the combined stochastic effects of Bias Temperature Instability (BTI) and Process Variation (PV). Traditional reliability analysis methods, which rely on computationally intensive simulations or extensive lookup tables, fail to scale efficiently for large designs, creating a critical bottleneck in design space exploration.
arXiv:2308. 07867v4 Announce Type: replace-cross Abstract: The absence of formal performance guarantees in machine learning (ML) has limited its adoption for safety-critical power system applications, where confidence and interpretability are as vital as accuracy.
By Parikshit Pareek, Sidhant Misra, Deepjyoti Deka
arXiv:2608. 16080v1 Announce Type: new Abstract: Thermal-aware optimization of multi-die 3D integrated circuits evaluates many designs, each a costly heat-equation solve.
By Xinling Yu, Yixing Li, Ziyue Liu, Xin Ai, Zhiyu Zeng, Hai Li, Zheng Zhang