Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors
Read the original on arXiv Machine Learning →The article presents the first demonstration of an agentic TCAD calibration workflow for a fabricated bottom‑gate In–W–O transistor. Starting from measured transfer curves, the workflow uses measurement–TCAD residuals and local sensitivity tests to guide parameter corrections or additional physical models, accepting only updates that improve device metrics. For a 2%‑W reference device, five agent‑suggested updates reduced the multi‑metric device objective by 14.3× and achieved low errors in threshold voltage and on‑current across varying bias and geometry, showing model transferability and process sensitivity.
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