Nanoparticle Networks for Neuromorphic Computing
arXiv:2607. 27844v1 Announce Type: cross Abstract: Physical computing leverages complex dynamical systems for energy-efficient data processing.
Physics-informed neural networks (PINNs) are applied to model ion‑electronic drift‑diffusion in Pt/SrTiO₃/Si memristive heterostructures, overcoming numerical stiffness and multiscale spatial challenges. A cascaded PINN architecture with a custom Chebyshev spectral optimizer (DSO V2 Hybrid) isolates potential, carrier density, and vacancy transport into four sequential sub‑networks, avoiding condition numbers above 10¹⁶. The surrogate reproduces experimental conductive‑AFM current‑voltage hysteresis with R² > 0.96, maintains Poisson consistency, and offers differentiable inverse parameter estimation and linear‑time inference compared to conventional finite‑element solvers.
arXiv:2607. 27844v1 Announce Type: cross Abstract: Physical computing leverages complex dynamical systems for energy-efficient data processing.
The paper develops a multiscale framework linking plasma deposition conditions to the functionality of sputtered SiO$_x$/Cu/SiO$_x$ memristive devices. By analyzing over 50,000 devices and combining plasma and atomistic simulations, it shows that device behavior arises from a probabilistic cascade of defect formation, evolution, and functional regime emergence, rather than deterministic mappings. A latent descriptor based on reconstructed oxygen‑vacancy density captures the combined effects of structural disorder and defect topology, linking hidden material properties to observable electrical responses and explaining variability in large‑area devices.
The paper introduces a physics‑informed graph attention network that directly operates on the tetrahedral mesh used in TCAD simulations of FinFET devices. By predicting electrostatic potential and quasi‑Fermi levels at every mesh node and training with both data loss and finite‑volume current‑continuity residuals, the surrogate retains the underlying carrier‑transport physics while achieving size generalization. Benchmarks against Sentaurus Device show sub‑volt RMSE for the drift‑diffusion fields and a per‑design throughput that is orders of magnitude faster, enabling rapid Pareto‑front exploration of large multi‑fin arrays that would otherwise be prohibitively slow to simulate.
arXiv:2609.13200v1 Announce Type: cross Abstract: Compact transistor models are the mathematical backbone of circuit simulation. However, at advanced nodes such as 3nm, transport physics becomes too...
arXiv:2507.05134v2 Announce Type: replace Abstract: We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimens...
arXiv:2606. 07836v1 Announce Type: cross Abstract: Many-body GW-Bethe-Salpeter equation calculations are essential for accurate simulations of electronic structure and optical properties in modern low-dimensional nanomaterials.
arXiv:2607. 00286v1 Announce Type: cross Abstract: Oscillatory neural networks (ONNs) have emerged as a promising neuromorphic architecture, leveraging coupled dynamical systems to perform computation and represent information through phase relationships.
arXiv:2606. 16693v1 Announce Type: cross Abstract: Biophysical neuron models link measurements of neural activity to underlying cellular mechanisms.
arXiv:2606. 14498v1 Announce Type: cross Abstract: Predicting the Kohn-Sham Hamiltonian with machine learning can accelerate density functional theory while retaining access to molecular orbitals, energy levels, and electronic-structure observables that energy-only surrogates cannot resolve.
arXiv:2606. 29272v1 Announce Type: new Abstract: Technology computer-aided design (TCAD) semiconductor device simulation is fundamentally constrained by the high computational cost of iteratively solving coupled drift-diffusion equations.
arXiv:2608.27533v1 Announce Type: cross Abstract: We introduce a new ab initio approach to simulate semiconductor devices that integrates scalable machine-learned (ML) electronic structure models wit...
arXiv:2607. 03682v1 Announce Type: cross Abstract: Convection-dominated convection-diffusion problems often develop thin layers, where the solution has sharp transition profiles and its derivatives are highly localized.