arXiv Machine Learning

Physics-Informed Neural Network Surrogate for Oxygen Vacancy Dynamics in epitaxial $\mathrm{SrTiO_3}$ on Si memristors via Dynamic Spectral Optimization

Physics-informed neural networks (PINNs) are applied to model ion‑electronic drift‑diffusion in Pt/SrTiO₃/Si memristive heterostructures, overcoming numerical stiffness and multiscale spatial challenges. A cascaded PINN architecture with a custom Chebyshev spectral optimizer (DSO V2 Hybrid) isolates potential, carrier density, and vacancy transport into four sequential sub‑networks, avoiding condition numbers above 10¹⁶. The surrogate reproduces experimental conductive‑AFM current‑voltage hysteresis with R² > 0.96, maintains Poisson consistency, and offers differentiable inverse parameter estimation and linear‑time inference compared to conventional finite‑element solvers.

arXiv Machine Learning
Sep 25

From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO$_x$ Memristive Devices

The paper develops a multiscale framework linking plasma deposition conditions to the functionality of sputtered SiO$_x$/Cu/SiO$_x$ memristive devices. By analyzing over 50,000 devices and combining plasma and atomistic simulations, it shows that device behavior arises from a probabilistic cascade of defect formation, evolution, and functional regime emergence, rather than deterministic mappings. A latent descriptor based on reconstructed oxygen‑vacancy density captures the combined effects of structural disorder and defect topology, linking hidden material properties to observable electrical responses and explaining variability in large‑area devices.

By Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla, Ole Gronenberg, Luca Vialetto, Hermann Kohlstedt, Thomas Mussenbrock, Jan Trieschmann
arXiv Machine Learning
Sep 4

Mesh-Native Physics-Informed Graph Surrogates for TCAD-in-the-Loop Design Space Exploration

The paper introduces a physics‑informed graph attention network that directly operates on the tetrahedral mesh used in TCAD simulations of FinFET devices. By predicting electrostatic potential and quasi‑Fermi levels at every mesh node and training with both data loss and finite‑volume current‑continuity residuals, the surrogate retains the underlying carrier‑transport physics while achieving size generalization. Benchmarks against Sentaurus Device show sub‑volt RMSE for the drift‑diffusion fields and a per‑design throughput that is orders of magnitude faster, enabling rapid Pareto‑front exploration of large multi‑fin arrays that would otherwise be prohibitively slow to simulate.

By Leonid Popryho, Ayoub Sadeghi, Inna Partin-Vaisband
arXiv Machine Learning
Sep 10

Deep Learning to Automate Parameter Extraction and Model Fitting of Two-Dimensional Transistors

arXiv:2507.05134v2 Announce Type: replace Abstract: We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimens...

By Robert K. A. Bennett, Jan-Lucas Uslu, Harmon F. Gault, Asir Intisar Khan, Lauren Hoang, Tara Pe\~na, Kathryn Neilson, Young Suh Song, Zhepeng Zhang, Andrew J. Mannix, Eric Pop
arXiv AI
Jun 15

A Fixed-Point Neural Operator for Size- and Functional-Transferable Hamiltonian Prediction

arXiv:2606. 14498v1 Announce Type: cross Abstract: Predicting the Kohn-Sham Hamiltonian with machine learning can accelerate density functional theory while retaining access to molecular orbitals, energy levels, and electronic-structure observables that energy-only surrogates cannot resolve.

By Yunhong Lou, Xihang Yue, Xinran Wei, Tianqi Deng, Linchao Zhu