Physics-informed neural networks (PINNs) are applied to model ion‑electronic drift‑diffusion in Pt/SrTiO₃/Si memristive heterostructures, overcoming numerical stiffness and multiscale spatial challenges. A cascaded PINN architecture with a custom Chebyshev spectral optimizer (DSO V2 Hybrid) isolates potential, carrier density, and vacancy transport into four sequential sub‑networks, avoiding condition numbers above 10¹⁶. The surrogate reproduces experimental conductive‑AFM current‑voltage hysteresis with R² > 0.96, maintains Poisson consistency, and offers differentiable inverse parameter estimation and linear‑time inference compared to conventional finite‑element solvers.
By Rodion Podorozhny, Nikoleta Theodoropoulou, Jelena Te\v{s}i\'c
arXiv:2607. 27844v1 Announce Type: cross Abstract: Physical computing leverages complex dynamical systems for energy-efficient data processing.
By Jonas Mensing, Wilfred G. van der Wiel, Andreas Heuer
The article reviews strategies for modeling chemical disorder in materials, addressing the gap between experimental descriptions of disorder and the detailed configurations required for atomistic simulations and AI workflows. It evaluates traditional approaches such as mean-field theories, cluster expansion, and Monte Carlo, alongside emerging AI-powered methods like universal interatomic potentials and generative models. The review also discusses how AI can accelerate computational schemes and enable disorder-native capabilities, providing a roadmap for integrating disorder into realistic AI-accelerated materials discovery.
By Jiayu Peng, Peichen Zhong
AtomWorld-Mem is a memory‑restored atomistic world model that reconstructs hidden world states from incomplete crystal snapshots, enabling more accurate long‑horizon atomistic evolution. It uses spatial encoders to capture multi‑scale keyframes and integrates short‑term event memory with long‑term structural memory to predict future states. The restored state guides vacancy‑mediated events in kinetic Monte Carlo simulations, improving progress under fixed event budgets while preserving fidelity across energetic, structural, and transport observables, and it transfers zero‑shot across unseen alloy‑temperature scenarios.
By Tian Luo, Ruge Zhang, Haozhi Han, Yifrng Chen, Yunquan Zhang, Yunxin Liu, Ting Cao, Kun Li
arXiv:2607. 05187v1 Announce Type: new Abstract: As CMOS technology scales into the deep nanometer regime, digital circuit reliability is increasingly threatened by the combined stochastic effects of Bias Temperature Instability (BTI) and Process Variation (PV).
By Arash Esshaghi, Siavash Es'haghi, Gholamreza Shahabadi, Alireza Moradi
The paper presents physics‑guided machine‑learning models that predict defect formation energies and zero‑phonon lines (ZPLs) for point defects in semiconductors, aiming to replace costly density‑functional theory (DFT) calculations in the prescreening stage of high‑throughput workflows. Using ridge, kernel ridge, and multilayer perceptron models with three descriptors, the authors achieve mean absolute errors of 0.437 eV for formation energies and 0.202 eV for ZPLs on vacancies and substitutions in 4H‑SiC, while interstitials show larger errors (1.101 eV and 0.230 eV). These results demonstrate that the models can effectively accelerate defect screening, potentially obviating the need for expensive DFT relaxations in many cases.
By Paul Karlsson, Joel Davidsson, Rickard Armiento