arXiv:2607. 27844v1 Announce Type: cross Abstract: Physical computing leverages complex dynamical systems for energy-efficient data processing.
By Jonas Mensing, Wilfred G. van der Wiel, Andreas Heuer
The paper develops a multiscale framework linking plasma deposition conditions to the functionality of sputtered SiO$_x$/Cu/SiO$_x$ memristive devices. By analyzing over 50,000 devices and combining plasma and atomistic simulations, it shows that device behavior arises from a probabilistic cascade of defect formation, evolution, and functional regime emergence, rather than deterministic mappings. A latent descriptor based on reconstructed oxygen‑vacancy density captures the combined effects of structural disorder and defect topology, linking hidden material properties to observable electrical responses and explaining variability in large‑area devices.
By Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla, Ole Gronenberg, Luca Vialetto, Hermann Kohlstedt, Thomas Mussenbrock, Jan Trieschmann
The paper introduces a physics‑informed graph attention network that directly operates on the tetrahedral mesh used in TCAD simulations of FinFET devices. By predicting electrostatic potential and quasi‑Fermi levels at every mesh node and training with both data loss and finite‑volume current‑continuity residuals, the surrogate retains the underlying carrier‑transport physics while achieving size generalization. Benchmarks against Sentaurus Device show sub‑volt RMSE for the drift‑diffusion fields and a per‑design throughput that is orders of magnitude faster, enabling rapid Pareto‑front exploration of large multi‑fin arrays that would otherwise be prohibitively slow to simulate.
By Leonid Popryho, Ayoub Sadeghi, Inna Partin-Vaisband
arXiv:2609.13200v1 Announce Type: cross
Abstract: Compact transistor models are the mathematical backbone of circuit simulation. However, at advanced nodes such as 3nm, transport physics becomes too...
By Pranavanath Balamurali, Prathamesh Dinesh Joshi, Raj Abhijit Dandekar, Rajat Dandekar, Sreedath Panat
arXiv:2507.05134v2 Announce Type: replace
Abstract: We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimens...
By Robert K. A. Bennett, Jan-Lucas Uslu, Harmon F. Gault, Asir Intisar Khan, Lauren Hoang, Tara Pe\~na, Kathryn Neilson, Young Suh Song, Zhepeng Zhang, Andrew J. Mannix, Eric Pop
arXiv:2606. 07836v1 Announce Type: cross Abstract: Many-body GW-Bethe-Salpeter equation calculations are essential for accurate simulations of electronic structure and optical properties in modern low-dimensional nanomaterials.
By Arnab Neogi, Aaron Forde, Christopher A. Lane, Sergei Tretiak, Jian-Xin Zhu