A Digital Simulation Toolkit for Physics-Based Generation of Realistic Experimental Scanning Tunneling Microscopy Images
Read the original on arXiv Machine Learning →The Flow has not summarised this story yet — read it at arXiv Machine Learning.
The Flow has not summarised this story yet — read it at arXiv Machine Learning.
arXiv:2506. 01678v2 Announce Type: replace-cross Abstract: Scanning tunnelling microscopy (STM) is a powerful technique for imaging surfaces with atomic resolution, providing insight into physical and chemical processes at the level of single atoms and molecules.
arXiv:2606. 09419v1 Announce Type: cross Abstract: Artificial intelligence is rapidly advancing materials characterization, yet most applications in electron microscopy rely solely on image contrast, overlooking the chemical and experimental context that shapes image formation.
arXiv:2607. 10388v1 Announce Type: cross Abstract: Artificial intelligence (AI) is transforming electron microscopy by enabling quantitative analysis of increasingly large and complex datasets for nanoparticle characterization.
The paper introduces a ptychography‑supervised learning framework that transforms 4D‑STEM data into real‑time atomic‑resolution phase images. By training a compact model on physics‑constrained reference phase maps from a single AuPd dataset, the method predicts local phase patches directly from diffraction patterns without probe calibration or iterative optimization. The resulting workflow achieves an online latency of ~0.27 ms per probe position, a 1,000‑fold speed‑up over GPU‑accelerated ePIE, and maintains atomic‑scale lattice contrast while generalizing across materials, defocus conditions, and instruments.
arXiv:2505. 12650v2 Announce Type: replace-cross Abstract: Reconstructing atomistic crystal structures from a single noisy STEM projection is an ill-posed inverse problem: multiple lattices can explain similar contrast, and purely feed-forward models cannot verify physical validity.
arXiv:2606. 02434v1 Announce Type: new Abstract: Precise parametric control over circuit geometry is essential for semiconductor inspection, yet obtaining sufficient real training data remains costly.